Customization: | Available |
---|---|
Material: | Compound Semiconductor |
Type: | Intrinsic Semiconductor |
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Forward Voltage | VF | IF=12.5A | Max 1.05 | V |
Reverse current | IR | VR=VRM | Max 10 | μ A |
Thermal reslstance | QJC | Junction to Case | Max 1.5 | ºC/W |
Item | Symbol | Condition | Ratings | Uni |
Storage temperature | Tstg | - | -40~150 | ºC |
Operating junction Temperature | TJ | - | 150 |
ºC |
Max reverse voltage | VRM | - | - | - |
S25VB100 |
- | - | 1000 | V |
Average rectified forward current | Io |
50Hz Sine wave resistance load Tc=85ºC | 25 |
A |
Peak Surge forward Current | IFSM | Non-repetitive 50Hz 10ms Sine wave Tj=25ºC |
400 |
A |
Dielectric strengt | Vdia | Terminals to case AC 1 minute | 2 | KV |
Serial number | Raw material | Type | Specifications | Amount | Place of Origin |
1 | Chip | 160 | 25A | 4K | Shanghai |
2 | Axle housing | - | 32x32 | 1K | Shanghai |
3 | Epoxy resin | 5217A/B | Black | 7Kg | Zhejiang |
4 | Terminal | S series | - | 1 set | Self production |